2SA1314 2002-08-19 1 toshiba transistor silicon pnp epitaxial type (pct process) 2SA1314 strobe flash applications audio power applications high dc current gain and excellent linearity : h fe (1) = 140 to 600 (v ce = ? 1 v, i c = ? 0.5 a) : h fe (2) = 60 (min), 120 (typ.), (v ce = 1 v, i c = ? 4 a) low saturation voltage : v ce (sat) = ? 0.5 v (max) (i c = ? 2 a, i b = ? 50 ma) small package complementary to 2sc2982 maximum ratings (ta = 25c) characteristics symbol rating unit collector-base voltage v cbo ? 20 v collector-emitter voltage v ceo ? 10 v emitter-base voltage v ebo ? 6 v dc i c ? 2 collector current pulsed (note 1) i cp ? 4 a base current i b ? 2 a p c 500 collector power dissipation p c (note 2) 1000 mw junction temperature t j 150 c storage temperature range t stg ? 55 to 150 c note 1: pulse test: pulse width = 10 ms (max), duty cycle = 30% (max) note 2: mounted on ceramic substrate (250 mm 2 0.8 t) unit: mm pw-mini jedec D jeita sc-62 toshiba 2-5k1a weight: 0.05 g (typ.)
2SA1314 2002-08-19 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb = ? 20 v, i e = 0 D D ? 100 na emitter cut-off current i ebo v eb = ? 6 v, i c = 0 D D ? 100 na collector-emitter breakdown voltage v (br) ceo i c = ? 10 ma, i b = 0 ? 10 D D v emitter-base breakdown voltage v (br) ebo i e = ? 1 ma, i c = 0 ? 6 D D v h fe (1) (note 3) v ce = ? 1 v, i c = ? 0.5 a 140 D 600 dc current gain h fe (2) v ce = ? 1 v, i c = ? 4 a 60 120 D collector-emitter saturation voltage v ce (sat) i c = ? 2 a, i b = ? 50 ma D ? 0.2 ? 0.5 v base-emitter voltage v be v ce = ? 1 v, i c = ? 2 a D ? 0.83 ? 1.5 v transition frequency f t v ce = ? 1 v, i c = ? 0.5 a D 140 D mhz collector output capacitance c ob v cb = ? 10 v, i e = 0, f = 1 mhz D 50 D pf note 3: h fe (1) classification a: 140 to 280, b: 200 to 400, c: 300 to 600 marking t a type name h fe classification
2SA1314 2002-08-19 3 collector-emitter voltage v ce (v) collector current i c (a) safe operating area dc current gain h fe collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) h fe ? i c ambient temperature ta (c) p c ? ta collector power dissipation p c (w) base-emitter voltage v be (v) i c ? v be collector current i c (a) collector current i c (a) v ce (sat) ? i c collector-emitter saturation voltage v ce (sat) (v) 0 1.6 2.4 0.8 0 1 common emitter ta 25c 3 i b 1 ma 2 4 10 0 3 2 5 30 50 100 0 0.8 1.2 0.4 0 1 common emitter v ce 1 v 3 2 4 2.0 1.6 ta 100c 25 25 0.01 3 0.03 10 2000 1000 100 50 30 common emitter v ce 1 v ta 100c 25 25 0.3 1 0.1 500 common emitter i c /i b 40 0.01 0.1 10 0.1 0.01 0.03 0.3 3 ta 100c 25 25 0.3 1 1 0.03 0.05 0.5 (1) mounted on ceramic substrate (250 mm 2 0.8 t) (2) no heat sink 0 80 20 0 0.2 1.0 120 40 100 160 0.4 0.6 0.8 1.2 ( 1 ) ( 2 ) 60 140 * : single no repetitive pulse ta 25c curves must be derated linearly with increase in temperature tested without a substrate 0.1 3 1 0.3 0.03 1 10 5 dc operation ta 25c 0.1 3 10 0.05 0.3 0.5 i c max (pulse) * i c max (continuous) 100 ms * 10 ms * v ceo max 30
2SA1314 2002-08-19 4 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use
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